kst-2070-000 1 STN2222SF npn silicon transistor description ? general purpose application ? switching application features ? large collector current ? low collector saturation voltage ? complementary pair with stn2907sf ordering information type no. marking package code STN2222SF ha sot-23f outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. emitter 3. collector 0.4 0.05 0~0.1 3 1 2 1.90 bsc 2.9 0.1 0.15 0.05 2.4 0.1 0.9 0.1 1.6 0.1
kst-2070-000 2 STN2222SF absolute maximum ratings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v collector current i c 600 ma collector dissipation p c * 350 mw junction temperature t j 150 c storage temperature t stg -55~150 c * : package mounted on 99.5% alumina 10 8 0.1 electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =10 a, i e =0 60 - - v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 30 - - v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 5 - - v collector cut-off current i cbo v cb =60v, i e =0 - - 10 na dc current gain h fe v ce =10v, i c =10ma 75 - - collector-emitter saturation voltage v ce(sat) i c =150ma, i b =15ma - 0.4 v transition frequency f t v ce =20v, i c =20ma 250 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 6.0 - pf
kst-2070-000 3 STN2222SF electrical characteristic curves fig. 4 v ce(sat) - i c fig. 3 i c - v ce fig. 2 i c - v be fig. 5 h fe - i c fig. 1 pc - ta
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